Résumé
Highly doped semiconductors, such as Si-doped InAsSb, are promising alternative materials for plasmonic application in the mid-infrared spectral range because they benefit from compatibility with silicon technology, from low losses and from tunable permittivity. We propose to detail what are the main advantages of InAsSb: Si compared to noble metals and how they can be used for bio-sensing applications. We demonstrate that 1-D InAsSb: Si ribbon arrays outperform 1-D gold ribbon arrays because of the latter uses little the lightning rod effect. In the case of 2-D nano-antenna arrays, it is possible to exploit a strong polarization dependent resonance to cover a large spectral range for sensing. Finally, we demonstrate that the highly doped semiconductor 1-D ribbon arrays and 2-D nano-antenna arrays allow surface plasmon resonance (SPR) sensing and surface-enhanced infrared absorption (SEIRA).