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Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs
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Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs

Frédéric Martinez, Guillaume Neau, Matteo Valenza et J.C. Vildeuil
Ultimate integration on silicon (Grenoble, France, 2006)

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