Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes

Cleiton Marques; Alain Michez; Frédéric Wrobel; S. Kuboyama; Frédéric Saigné; Luigi Dilillo; Y.Q. Aguiar; Rubén García Alía

Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes

Acte de colloque

Open Access

Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes

Cleiton Marques, Alain Michez, Frédéric Wrobel, S. Kuboyama, Frédéric Saigné, Luigi Dilillo, Y.Q. Aguiar et Rubén García Alía

RADiation Effects on Components and Systems (RADECS) (Maspalomas, Canary Islands, Spain, 16/09/2024–20/09/2024)

Résumé

Silicon carbide device SiC Schottky diode TCAD ECORCE thermal runaway critical electric field

Silicon carbide device

SiC

Schottky diode

TCAD

ECORCE

thermal runaway

critical electric field

SiC has a highly critical electric field, which is promising for power applications. However, by investigating theunderlying physical phenomenon, we show that this property is also the main reason for its sensitivity to SEB.

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Titre: Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes
Créateurs - sans rôle: Cleiton Marques - Institut d'Électronique et des Systèmes
Alain Michez - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Frédéric Wrobel - Institut d'Électronique et des Systèmes
S. Kuboyama - High-Reliability Engineering & Components Corporation (HIREC), Tsukuba, Ibaraki 305-0033, Japan
Frédéric Saigné - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Luigi Dilillo - Institut d'Électronique et des Systèmes
Y.Q. Aguiar - CERN [Genève]
Rubén García Alía - CERN [Genève]
Colloque: RADiation Effects on Components and Systems (RADECS) (Maspalomas, Canary Islands, Spain, 16/09/2024–20/09/2024)
Identifiants: 9946916209311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-04715410