Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity

Felix Oehlschlaeger; Sandrine Juillaguet; Herve Peyre; Jean Calmassel; Peter J. Wellmann

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Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity

Felix Oehlschlaeger, Sandrine Juillaguet, Herve Peyre, Jean Calmassel et Peter J. Wellmann

SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-617, pp.259-262

7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), Spain, 07/09/2008–11/09/2008)

2009

Résumé

photoluminescence-topography

mapping

absorption measurement

determination of doping inhomogeneity

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following, work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2" at room- and low temperature in a non-destructive way.

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Titre: Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
Créateurs - sans rôle: Felix Oehlschlaeger
Sandrine Juillaguet - Groupe d'étude des semiconducteurs
Herve Peyre - Groupe d'étude des semiconducteurs
Jean Calmassel
Peter J. Wellmann
Détails de publication: SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-617, pp.259-262
Colloque: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), Spain, 07/09/2008–11/09/2008)
Identifiants: 9946010309311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00389394