Résumé
We theoretically and experimentally study the THz electromagnetic properties of photo-generated carriers in an undoped-InAs slab. We use an optical pump to modify the permittivity. These modifications are calculated by solving the ambipolar rate equation for the photo-carriers. Experiments demonstrate that InAs is a promising semiconductor that can be used to manufacture fast and efficient on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1 THz at very low pump fluence in the continuous wave regime.