Résumé
Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze the impact of capacitive defects on the TAS-MRAM performance. Electrical simulations were performed on a 16- words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that writing operations may be affected by these defects. Especially, we demonstrate that some capacitive defects may have a local (single cell) impact on the functionality of TAS-MRAM while others, even if there is an effective coupling, do not change the functional operation. These results will be further used to develop effective test algorithms targeting faults related to actual defects that may affect TAS- MRAM architecture.