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Optical properties of GaN: from free excitons in the bulk to confined negatively charged excitons in quantum dots grown by molecular beam epitaxy
Acte de colloque

Optical properties of GaN: from free excitons in the bulk to confined negatively charged excitons in quantum dots grown by molecular beam epitaxy

Bernard Gil
2008 International Nano-Optoelectronics Workshop, pp.83-83
08/2008

Résumé

Excitons Gallium nitride Materials Molecular beam epitaxial growth Optical films Quantum dots
After reviewing fourtty years investigations of the optical properties of GaN bulk and thin film crystals grown along any crystallographic directions, I finally address the low dimensional systems and in particular, the optical properties of GaN quantum dots grown by molecular beam epitaxy and that are surprisingly compatible with recombinations of negatively charged excitons.

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