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Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition
Acte de colloque

Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

E. Neyret, G. Ferro, Sandrine Juillaguet, Jm Bluet, C. Jaussaud et Jean Camassel
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.61-2, pp.253-257
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98) (MONTPELLIER (FRANCE), France, 02/09/1998)
1999

Résumé

SiC CVD growth residual doping susceptor purity photoluminescence EPITAXIAL-GROWTH SILICON-CARBIDE

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