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On the Use of LVTPNP in ESD Protection Structures
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On the Use of LVTPNP in ESD Protection Structures

Antoine Rivière, Philippe Coll, David Bernard, Pascal Nouet et Florence Azaïs
IEW'07: International Electrostatic Discharge Workshop (Lake Tahoe, CA, United States, 17/05/2007)
2007

Résumé

In this paper, design aspects, protection capabilities and applications of Low-Voltage-Triggered bipolar PNP in comparison with grounded-gate NMOS protection are presented. Experimental results are obtained in an embedded 0.18 μm salicided CMOS process.

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