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Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors
Acte de colloque

Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors

Aleksandr Kadykov, Christophe Consejo, M. Marcinkiewicz, L. Viti, M. S. Vitiello, Sergey S. Krishtopenko, Sandra Ruffenach, S. V. Morozov, Wilfried Desrat, Nina Diakonova, …
Physica Status Solidi C-Current Topics in Solid State Physics, Vol.13(7-9), pp.534-537
17th International Conference on II-VI Compounds (Paris, France, 2016)
2016
DOI: https://doi.org/10.1002/pssc.201510264

Résumé

Landau levels magnetic-field topological transitions field effect transistors terahertz photoconductivity
We have found the possibility to probe the magnetic field-driven topological phase transition in HgTe-based transistors by measuring their Terahertz photoconductivity response. At the critical magnetic field to which zero-mode Landau levels cross, we have observed a pronounced photoconductivity peak independent on incident frequency and carrier concentration. Our results pave the way towards terahertz topological field effect transistors.

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