Résumé
We present a numerical low frequency noise modeling related to oxide trapping/detrapping process, based on green's function formulation and its application to ultrathin oxide characterization. This model allows slow trap density profiles to be determined. The model was applied in the investigation of the validity of the flat band voltage fluctuation model in the case of thin oxides. Numerical gate current noise modeling was applied to the characterization of nitridation-induced traps. Finally, 2D model was applied in the investigation of low-frequency degradation of MOSFETs stressed by hot-carriers, and the generated slow oxide trap density profiles were deduced.