Résumé
Nonvolatile memories are widely used in emerging energy-harvesting Internet-of-Things (IoT) applications, and nonvolatile memories constructed from FeFET devices hold great promise. This paper presents a nonvolatile and single-event-upset (SEU)-recoverable latch based on FeFET and CMOS for energyharvesting devices. The latch uses n-type FeFET devices to provide nonvolatility without any additional control signals. Moreover, since the soft error problem has become increasingly severe, radiation hardening by design gains a great attention as a promising approach to mitigate the reliability issue. The latch uses feedback interlocked loops with n-type FeFETs and C-elements, enabling it to provide nonvolatility and SEU-recovery simultaneously. Simulation results with Candence Virtuoso verifies that the proposed latch design has correct functioning with excellent performance compared to the state-of-the-art designs.