Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

Bernard P Orsal; Jean-Marie Peransin; K Daulasim; Philippe Signoret; Pascal Y Devoldere; M Robinet; Mitsuo Fukuda

doi:10.1117/12.146909

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Acte de colloque

Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

Bernard P Orsal, Jean-Marie Peransin, K Daulasim, Philippe Signoret, Pascal Y Devoldere, M Robinet et Mitsuo Fukuda

Proceedings of SPIE, Vol.1850(1), pp.222-237

Laser Diode Technology and Applications V

16/06/1993

DOI: https://doi.org/10.1117/12.146909

Résumé

The longitudinal mode hopping and the related terminal electrical noise in InGaAs/GaAs ridge single quantum well (SQW) lasers are investigated. It is found that electrical mode hopping has a Lorentzian dependence. The correlation with the optical noise is experimentally shown for low and medium frequencies.

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Détails

Titre: Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging
Créateurs - sans rôle: Bernard P Orsal - Univ. Montpellier II (France)
Jean-Marie Peransin - Univ. Montpellier II (France)
K Daulasim - Univ. Montpellier II (France)
Philippe Signoret - Univ. Montpellier II (France)
Pascal Y Devoldere - Ctr. National d'Etudes des Telecommunications (France)
M Robinet - Ctr. National d'Etudes des Telecommunications (France)
Mitsuo Fukuda - NTT Optoelectronics Labs. (Japan)
Détails de publication: Proceedings of SPIE, Vol.1850(1), pp.222-237
Colloque: Laser Diode Technology and Applications V
Nombre de pages: 16
Identifiants: 99162637209311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding