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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
Acte de colloque

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

J. Eid, I.-G. Galben, G. Zoulis, Teddy Robert, D. Chaussende, Sandrine Juillaguet, Antoine Tiberj et Jean Camassel
SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-617, pp.45-48
7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), Spain, 07/09/2008)
2009

Résumé

3C-SiC CF-PVT KOH etching N doping PHYSICAL VAPOR TRANSPORT SILICON-CARBIDE CONTINUOUS FEED

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