Résumé
Infrared photo detectors operating in the mid infrared region find application in pollution monitoring, high speed infrared imaging systems and free space telecommunications. Currently the dominant infrared detector technology are based on HgCdTe or InSb photovoltaic devices. Because of their narrow band gap these devices show at room temperature (RT) high dark reverse current and small R0.A product, which significantly restrict the getting of high ambient performances. To reduce the darkness current and increase R0.A product, we suggested studying structures with large band gap energy. The objective of the photo detector structures modelling presented in this paper is double. It allows first to simulate and to estimate the theoretical performances of previously introduced large band gap components. As such we shall calculate, the product R0.A and the quantum efficiency to end in the specific detectivity D*. It is also a support to help in the understanding and in the interpretation of the made photo detectors characterizations.