Logo image
Se connecter
Retour
Monolithic, Sb-based electrically pumped VCSELs emitting at 2.3μm
Acte de colloque

Monolithic, Sb-based electrically pumped VCSELs emitting at 2.3μm

A. Ducanchez, L. Cerutti, A. Garnache et F. Genty
2008 20th International Conference on Indium Phosphide and Related Materials, pp.1-3
05/2008
DOI: https://doi.org/10.1109/ICIPRM.2008.4702955

Résumé

antimonide semiconductors Distributed Bragg reflectors Gas lasers Indium phosphide Laser tuning Mid-Infrared Semiconductor lasers Substrates Surface emitting lasers Temperature VCSELs Vertical cavity surface emitting lasers Wet etching
Demonstration of a 2.3 mum emission at room temperature under quasi continuous-wave operation from a Sb-based monolithic Vertical Cavity surface emitting laser is reported. The structure is composed of 2 n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi quantum well active region and a tunnel junction. For 80 mum diameter devices, density threshold of 0.8 kA/cm 2 at RT is achieved.

Indicateurs

1 Consultations de la notice

Détails

Logo image