- Titre
- Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
- Créateurs - sans rôle
- Konstantinos Zekentes - Institute of Electronic Structure & LaserKonstantin Vassilevski - Newcastle University [Newcastle]Antonis StavrinidisKonstantin KonstantinidisMaria KayambakiKonstantinos VamvoukakisEmmanouil VassakisHervé Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2CNikolaos Makris - Department of Psychiatry [Boston]Matthias Bucher - Technical University of CretePatrick SchmidDionyssios StefanakisDimitrios Tassis - Aristotle University of Thessaloniki
- Détails de publication
- 16th International Conference on Silicon Carbide and Related Materials 2015, Vol.858, pp.913-916
- Colloque
- 16th International Conference on Silicon Carbide and Related Materials 2015 (Catane, Italy, 15/10/2015)
- Identifiants
- 99151798009311
- Unité académique
- Laboratoire Charles Coulomb - L2C
- Langue
- English
- Type de ressource
- Conference proceeding
- Champs locaux
- hal-02025247
Acte de colloque
Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
16th International Conference on Silicon Carbide and Related Materials 2015, Vol.858, pp.913-916
16th International Conference on Silicon Carbide and Related Materials 2015 (Catane, Italy, 15/10/2015)
05/2016
Indicateurs
1 Consultations de la notice