Résumé
Infrared reflectance is a powerful tool to control, rapidly and non-destructively, complex active layer stacks for electronic devices applications. The case of interest which is considered in this work concerns 4H-SiC Schottky diode structures. They are made of a lightly doped layer (drift zone, 5 x 1015 cm-3) on top of a heavily doped n+ substrate (5 x 1018 cm-3). In between is a thin (buried) SiC layer used as field stop (or buffer). From model calculations performed in the range 1000-4000 cm-1, we show that the shape of the interference spectra is very sensitive to the doping and thickness of the buried (buffer) layer.