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Mid-infrared Sb-based interband lasers grown on on-axis Si (001) substrates
Acte de colloque

Mid-infrared Sb-based interband lasers grown on on-axis Si (001) substrates

A. Remis, D. A. Diaz-Thomas, L. Monge Bartolome, M. Rio-Calvo, A. Gilbert, G. Boissier, A.N. Baranov, J.B. Rodriguez, L. Cerutti et E. Tournie
2022 Compound Semiconductor Week (CSW), pp.1-2
01/06/2022

Résumé

Compounds Gas lasers III-V on Silicon III-V semiconductor materials interband lasers Mid-Infrared Semiconductor lasers Silicon Substrates Temperature
We report on GaSb based interband lasers grown on on-axis silicon substrate working in continuous wave above temperature and emitting between 2 and 5 μm. We will present the dependance of the laser properties with the design of the active regions.

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