Résumé
In this talk we will review our recent work on antimonide mid-IR lasers (diode lasers (DLs), interband cascade lasers (ICLs), quantum cascade lasers (QCLs)) grown by molecular-beam epitaxy on (001) Si or Ge substrates. We will show that a dedicated epitaxial growth strategy allows solving a long lasting issue, the formation of antiphase boundaries, a device-killer defect typical for the growth of III-Vs on group-IV substrates. We will compare the laser performance to that of similar devices grown on their native substrates. If DLs are very sensitive to the residual dislocation density, ICLs and QCLs appear to be relatively immune to these defects. We will demonstrate light coupling from DLs grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.