Résumé
Self ordered InN dots are grown by Metal Organic Vapor Phase Epitaxy onto GaN, with very low surface densities. Such nano-objects may be employed in the realization of single photon emitters, for quantum cryptography applications. The growth parameters, like growth temperature, V/III molar ratio and deposition time are investigated. First "large" dots are grown, in order to easily assess the material quality, and are studied both by X-ray diffraction and Raman spectroscopy. After optimising the growth conditions, we decrease the deposition time, in order to obtain nanometer size structures. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.