MOVPE growth and optical properties of GaN deposited on c-plane sapphire

Olivier Briot; Bernard Gil; M. Tchounkeu; Roger Aulombard; François Demangeot; J. Frandon; M. Renucci

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MOVPE growth and optical properties of GaN deposited on c-plane sapphire

Olivier Briot, Bernard Gil, M. Tchounkeu, Roger Aulombard, François Demangeot, J. Frandon et M. Renucci

JOURNAL OF ELECTRONIC MATERIALS, Vol.26, pp.294-300

38th Electronic Materials Conference (EMC) (SANTA BARBARA (CA), United States, 26/06/1996)

1997

Résumé

GaN

growth

metalorganic vapor phase epitaxy (MOVPE)

Raman spectroscopy

WURTZITE GAN

PRESSURE

PHOTOLUMINESCENCE

CRYSTAL

We address combined utilization of temperature dependent reflectance, photoluminescence, and Raman spectroscopy measurements to optimize the structural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers.

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Détails

Titre: MOVPE growth and optical properties of GaN deposited on c-plane sapphire
Créateurs - sans rôle: Olivier Briot - Groupe d'étude des semiconducteurs
Bernard Gil - Groupe d'étude des semiconducteurs
M. Tchounkeu
Roger Aulombard - Groupe d'étude des semiconducteurs
François Demangeot
J. Frandon
M. Renucci
Détails de publication: JOURNAL OF ELECTRONIC MATERIALS, Vol.26, pp.294-300
Colloque: 38th Electronic Materials Conference (EMC) (SANTA BARBARA (CA), United States, 26/06/1996)
Identifiants: 9947540109311
Unité académique: Laboratoire Charles Coulomb - L2C; Initial MAnagement & prevent of acute orGan failures IN critically ill patiEnts - IMAGINE
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00546209