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Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.
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Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.

Pierre Corfdir, Pierre Lefebvre, J. Ristic, Samuel Sonderegger, Laurent Balet, T. Zhu, Amélie Dussaigne, Denis Martin, Jean-Daniel Ganière, N. Grandjean, …
Int. Conf. on Nitride Semiconductors - ICNS8. (Jeju, South Korea, 18/10/2009–23/10/2009)

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Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.

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