Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes at 300K and 77K

Acte de colloque

N. Dyakonova, S Karandashev, M. E. Levinshtein, B. Matveev et M.A. Remennyi

34th International Conference on the Physics of Semiconductors (ICPS2018) (Montpellier, France, 29/07/2018)

Fichiers et liens (1)

url

Find in HALAfficher

1 Consultations de la notice

Titre: Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes at 300K and 77K
Créateurs - sans rôle: N. Dyakonova - Université de Montpellier, Laboratoire Charles Coulomb - L2C
S Karandashev
M. E. Levinshtein
B. Matveev
M.A. Remennyi
Colloque: 34th International Conference on the Physics of Semiconductors (ICPS2018) (Montpellier, France, 29/07/2018)
Identifiants: 9935815009311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01926570