Résumé
Direct growth of III-V semiconductors on silicon substrates is of major interest for integrated photonics. However, it is plagued by various crystal defects. In particular, antiphase domains (APDs) are delineated by antiphase boundaries (APBs), 2D defects that act as shorts when they reach electrically active regions of devices [1]. Recently, we demonstrated the MBE growth of APB-free GaAs layers on