Investigation on Radiation-Induced Single-Event Latch-up in SRAM Memories on-Board PROBA-V

André Martins Pio de Mattos; Douglas Almeida dos Santos; Viyas Gupta; Thomas Borel; Luigi Dilillo

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Investigation on Radiation-Induced Single-Event Latch-up in SRAM Memories on-Board PROBA-V

Acte de colloque

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Investigation on Radiation-Induced Single-Event Latch-up in SRAM Memories on-Board PROBA-V

André Martins Pio de Mattos, Douglas Almeida dos Santos, Viyas Gupta, Thomas Borel et Luigi Dilillo

RADECS 2023 - European Conference on Radiation and Its Effects on Components and Systems (Toulouse, France, 25/09/2023–29/09/2023)

2023

Résumé

SRAM

Radiation

Single-Event Effects

Flight Data

Memory

Heavy ions

Protons

This work is a study on Single-Event Latch-up on an SRAM memory used in the PROBA-V mission. We investigate and draw hypotheses about the behavior observed in the mission by comparing the experimental results with the in-flight data.

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Détails

Titre: Investigation on Radiation-Induced Single-Event Latch-up in SRAM Memories on-Board PROBA-V
Créateurs - sans rôle: André Martins Pio de Mattos - Institut d'Électronique et des Systèmes
Douglas Almeida dos Santos - Institut d'Électronique et des Systèmes
Viyas Gupta - European Space Research and Technology Centre
Thomas Borel - European Space Research and Technology Centre
Luigi Dilillo - Institut d'Électronique et des Systèmes
Colloque: RADECS 2023 - European Conference on Radiation and Its Effects on Components and Systems (Toulouse, France, 25/09/2023–29/09/2023)
Identifiants: 9941141609311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-04266897