Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy

G. Zoulis; J. Sun; M. Beshkova; R. Vasiliauskas; Sandrine Juillaguet; Herve Peyre; M. Syvajarvi; R. Yakimova; Jean Camassel

Acte de colloque

Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy

G. Zoulis, J. Sun, M. Beshkova, R. Vasiliauskas, Sandrine Juillaguet, Herve Peyre, M. Syvajarvi, R. Yakimova et Jean Camassel

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol.645-648, pp.179-182

13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), France, 11/10/2009)

2010

Résumé

Low Temperature Photoluminescence

3C-SiC

n-type

p-type

sublimation epitaxy

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

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Titre: Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy
Créateurs - sans rôle: G. Zoulis
J. Sun
M. Beshkova
R. Vasiliauskas
Sandrine Juillaguet - Groupe d'étude des semiconducteurs
Herve Peyre - Groupe d'étude des semiconducteurs
M. Syvajarvi
R. Yakimova
Jean Camassel - Groupe d'étude des semiconducteurs
Détails de publication: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol.645-648, pp.179-182
Colloque: 13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), France, 11/10/2009)
Identifiants: 9943378909311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00543642