Résumé
In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances : same InAs-rich SL structure with different active zone thicknesses (from 0.5 micron to 4 microns) and different active zone doping (n-type versus p-type), same 1 micron thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4 microns active zone thickness, showing a QE that reaches 61 percent at lambda = 2 microns and 0V bias voltage.