Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers

Acte de colloque

Marcin Zielinski, Thierry Chassagne, Roxana Arvinte, Adrien Michon, Marc Portail, Sylvie Contreras, Sandrine Juillaguet et Herve Peyre

Material Sciences Forum, Vol.897

Mater. Sci. Forum

11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, Greece, 09/2016)

2017

Résumé

Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers

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Titre: Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers
Créateurs - sans rôle: Marcin Zielinski - NOVASiC (France)
Thierry Chassagne - Savoie Technolac
Roxana Arvinte
Adrien Michon - SES (Luxembourg)
Marc Portail - SES (Luxembourg)
Sylvie Contreras - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Sandrine Juillaguet - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Herve Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Détails de publication: Material Sciences Forum, Vol.897
Colloque: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, Greece, 09/2016)
Publications en série: Mater. Sci. Forum
Identifiants: 9944331209311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01935556