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InP Double Heterojunction Bipolar Transistor for detection above 1 THz
Acte de colloque

InP Double Heterojunction Bipolar Transistor for detection above 1 THz

Dominique Coquillat, V. Nodjiadjim, A. Konczykowska, Nina Diakonova, Christophe Consejo, Sandra Ruffenach, Frederic Teppe, M. Riet, A. Muraviev, A. Gutin, …
International Conference on Infrared Millimeter and Terahertz Waves
2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) (Hong Kong, China, 2015)
2015

Résumé

We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have gain and can still rectify THz current and voltage.

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