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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Reynald Alcotte, Bassem Salem, Etienne Eustache, Philippe Bézard, Xavier Chevalier, Geoffrey Lombard, Franck Bassani, …
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018) (Nara, Japan, 03/06/2018–06/06/2018)

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