Résumé
Gamma irradiation effects are investigated on Si/SiGe:C HBTs developed with the latest BiCMOS technologies. Unbiased HBTs are irradiated with a Co 60 source until in a Total Ionizing Dose of 330 krad. Irradiation effects are evaluated by measuring the excess base current from DC characteristics (Gummel plot) and the base current spectral density from Low Frequency Noise measurements, mainly by analyzing the 1/f noise level. Degradation comparison on two advanced BiCMOS technologies is done. The most integrated technology presents the higher robustness. Moreover, a comparison of the degradation induced by the Gamma source with an earlier study using an X-ray source is held.