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Imaging above 1 THz Limit with Si-MOSFET Detectors
Acte de colloque

Imaging above 1 THz Limit with Si-MOSFET Detectors

F. Schuster, Hadley Videlier, M. Sakowicz, Frederic Teppe, Dominique Coquillat, B. Dupont, A. Siligaris, L. Dussopt, B. Giffard et Wojciech Knap
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)
35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, Italy, 05/09/2010)
2010

Résumé

TECHNOLOGY
We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to similar to 300 mu m.

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