Résumé
Single junction III-V heterostructures based devices could overtake the Shockley-Queisser limit if thermalisation of photogenerated carriers can be strongly limited as in the hot carrier solar cell concept. Previous modelling and experiments have shown the interest of Multiple Quantum Wells heterostructures in the antimonide system and the importance of very thin structures. In this paper we report new data on the thermalisation rates in antimonide and phosphide heterostructures measured at ambient temperature. For the first time electrical control of hot carrier population is performed on hot carrier heterostructures devices