Résumé
High frequency front-ends are X-ray irradiated in biased and unbiased configurations. The high-frequency nonlinear response of the integrated PAs and LNAs to harmonic and two-tone excitations are studied. The impact of the bias configuration with respect to irradiation is highlighted. Considering high frequency characterization, measurements of the reflected IM3 tone at the input as well as the power response to a single tone excitement are implemented. They are shown interesting tools for predicting dysfunctionalities in high frequency circuits with respect to TID.