High-field electron transport in GaN under crossed electric and magnetic fields, Monte Carlo simulation

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V. A. Kochelap, V. V. Korotyeyev, G. I. Syngayivska et L. Varani

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Salamanca, Spain, 2015)

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Titre: High-field electron transport in GaN under crossed electric and magnetic fields, Monte Carlo simulation
Créateurs - sans rôle: V. A. Kochelap - National Academy of Sciences of Ukraine
V. V. Korotyeyev - National Academy of Sciences of Ukraine
G. I. Syngayivska - V.E. Lashkaryov Institute of Semiconductor Physics
L. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Colloque: 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Salamanca, Spain, 2015)
Identifiants: 9944594009311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-01921080