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High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography
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High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography

Dominique Coquillat, Virginie Nodjiadjim, Alexandre Duhant, Meriam Triki, Olivier Strauss, Agnieszka Konczykowska, Muriel Riet, Nina Dyakonova et Wojciech Knap
42nd International Conference on Infrared, Millimeter, and Terahertz Waves
IRMMW-THz: Infrared, Millimeter, and Terahertz Waves (Cancun, Mexico, 27/08/2017–01/09/2017)
01/09/2017

Résumé

We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.

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