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High Performance Mid-infrared Interband Cascade Lasers on GaSb and Si Substrates
Acte de colloque   Open Access

High Performance Mid-infrared Interband Cascade Lasers on GaSb and Si Substrates

Hyunah Kim, Daniel Andrés Díaz-Thomas, Maëva Fagot, Olivier Spitz, Heming Huang, A. N. Baranov, Laurent Cerutti et Frédéric Grillot
2024 IEEE 29th International Semiconductor Laser Conference (ISLC), pp.1 - 2
2024 IEEE 29th International Semiconductor Laser Conference (ISLC) (Orlando, United States, 29/09/2024–02/10/2024)
29/09/2024
DOI: https://doi.org/10.1109/islc57752.2024.10717389

Résumé

Semiconductor lasers Silicon Epitaxial growth Gas lasers Quantum cascade lasers Laser applications Substrates Photonics Interband cascade lasers Mid-infrared Free-space communications Integrated photonics

A comparison is made between static and dynamic properties of interband cascade lasers grown on GaSb and Si substrates at 3.3 µm. The latter demonstrates promising performance, suggesting future prospects for applications in freespace communications.

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