Résumé
Specific detectivity values of 1.0x10(11), 2.8x10(9) and 5.8x10(8) cmHz(1/2)/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.
- Titre
- High Detectivity MWIR Type-II Superlattice Grown on a GaAs Substrate
- Créateurs - sans rôle
- M. J. Hobbs - Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, EnglandS. D. Das - Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, EnglandC. H. Tan - Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, EnglandJ. P. R. David - Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, EnglandS. Krishna - Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USAJ. B. Rodriguez - Univ Montpellier 2, UMR CNRS 5214, Inst Elect Sud, F-34095 Montpellier, FranceE. Plis - Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USAIEEE
- Détails de publication
- 2011 IEEE PHOTONICS CONFERENCE (PHO), p.31
- Éditeur
- IEEE
- Nombre de pages
- 2
- Identifiants
- 99139393309311
- Unité académique
- Institut d'Electronique et des Systèmes - IES
- Langue
- English
- Type de ressource
- Conference proceeding