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Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions
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Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions

Viyas Gupta, Alexandre Louis Bosser, Georgios Tsiligiannis, Ali Mohammadzadeh, Arto Javanainen, Ari Virtanen, Helmut Puchner, Frédéric Saigné, Frédéric Wrobel et Luigi Dilillo
15th European Conference on Radiation and Its Effects on Components and Systems
RADECS: Radiation and Its Effects on Components and Systems (Moscou, Russia, 14/09/2015–18/09/2015)
2015

Résumé

FRAM Ionizing radiation test conditions
The impact of heavy ions on commercial Ferroelectric Memories (FRAMs) is analyzed. Moreover, the influence of different test modes and stimuli on their error rate is investigated.

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