Résumé
We present the liquid phase epitaxy growth (LPE) of GaInAsSb/( 1 00) GaSb and InAsSbP/( 1 00) InAs near their miscibility gap (MG) boundaries. The conditions f or growing latticematched layers of optoelectronic quality are given. The cut-off wavelength limitations due to the MG are : 2. 4 p. m for GaInAsSb and 2. 6 p. m for lnAsSbP. As an example of application results are presented on LPE grown photodiodes based on these quaternary alloys. 1 -