Résumé
Bulk 3C-SiC monocristalline material has been grown by high temperature vapor phase epitaxy on standard CVD 3C-SiC/Si seeds. Highly saturated silicon rich conditions have been used, rising the growth rate up to 70 mum/h at 1700degreesC. It drops down at 1600degreesC, reaching only 30 mum/h and less. Moreover, at this temperature and lower, Si droplets form on the surface while they disappear when the growth is performed at 1700degreesC. Photoluminescence measurements show that the 3C-SiC material grown at 1700degreesC is of optimum quality, with a quasi-complete absence of the defect-related G band.