Résumé
Integration of semiconductor laser diodes on Si substrates will allow the realization of complex photonics circuits with new functionalities. A promising way to combine the well known Si technology with III-V semiconductors is the direct growth of the Sb-based materials. Indeed, GaSb, AlSb, InAs and their related alloys offer a large range of band-gaps and band-offsets. High performance Sb-based lasers and detectors operating in the mid-infrared wavelength range as well as high speed and low consumption field effect transistors have already been demonstrated using these materials. We investigated the potential of GaSb-based lasers grown by molecular beam epitaxy onto Si substrate. With standard design and technology we demonstrate pulsed laser operation at room temperature from the telecom wavelength range (1.5 mu m) to the mid-IR (2.3 mu m). A new structure design with a dedicated technology process allows cw lasing at room temperature.