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GaSb-based integrated Lasers and Photodetectors on a Silicon-On-Insulator Waveguide Circuit for Sensing Applications in the Shortwave Infrared
Acte de colloque

GaSb-based integrated Lasers and Photodetectors on a Silicon-On-Insulator Waveguide Circuit for Sensing Applications in the Shortwave Infrared

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, G. Roelkens et IEEE
2012 Photonics Global Conference, pp.1-4
01/01/2012
DOI: https://doi.org/10.1109/PGC.2012.6458062

Résumé

Engineering Engineering, Electrical & Electronic Imaging Science & Photographic Technology Optics Physical Sciences Science & Technology Technology
We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design. On the other hand, integrated Fabry-Perot lasers operate in continuous wave at room temperature with a threshold current of 49.7mA.

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