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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy
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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

Laurent Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, Arnaud Garnache, Eric Tournié et Frédéric Genty
International Molecular Beam Epitaxy Conference (MBE international) (Vancouver, Canada, 2008)

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