GaN/AlN quantum wells and quantum dots for unipolar devices at telecommunication wavelengths

Francois H. Julien; Fabien Guillot; Maria Tchernycheva; Laetitia Doyennette; Laurent Nevou; Alon Vardi; Eva Monroy; Gad Bahir; Anatole Lupu; Elias Warde; Edith Bellet-Amalric

doi:10.1063/1.2729997

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GaN/AlN quantum wells and quantum dots for unipolar devices at telecommunication wavelengths

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GaN/AlN quantum wells and quantum dots for unipolar devices at telecommunication wavelengths

Francois H. Julien, Fabien Guillot, Maria Tchernycheva, Laetitia Doyennette, Laurent Nevou, Alon Vardi, Eva Monroy, Gad Bahir, Anatole Lupu, Elias Warde, …

PHYSICS OF SEMICONDUCTORS, PTS A AND B, Vol.893(1), pp.525-526

AIP Conference Proceedings

01/01/2007

DOI: https://doi.org/10.1063/1.2729997

Résumé

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Condensed Matter

Physics, Multidisciplinary

Science & Technology

Technology

We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application to infrared photodetection at telecommunication wavelengths.

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Détails

Titre: GaN/AlN quantum wells and quantum dots for unipolar devices at telecommunication wavelengths
Créateurs - sans rôle: Francois H. Julien - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Fabien Guillot - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Maria Tchernycheva - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Laetitia Doyennette - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Laurent Nevou - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Alon Vardi - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Eva Monroy - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Gad Bahir - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Anatole Lupu - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Elias Warde - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Edith Bellet-Amalric - Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
Contributeurs - sans rôle: W Jantsch
F Schaffler
Détails de publication: PHYSICS OF SEMICONDUCTORS, PTS A AND B, Vol.893(1), pp.525-526
Publications en série: AIP Conference Proceedings
Éditeur: Amer Inst Physics
Nombre de pages: 2
Note de subvention: 004170 / EC FP6 SLREP project "Nitwave" ISL
Identifiants: 99163022909311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding