Résumé
1/f noise in p-channel MOSFET with various gate geometries is presented. For small W/L ratios the noise follows the Delta mu model. For large W/L ratios experimental results show an important contribution of the access resistances. Using the low frequency behaviour of the device in the ohmic range this contribution is investigated and separated from the intrinsic channel noise. Finally a quadratic law versus the drain current is obtained for the access resistance noise.