Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC

M. Zielinski; C. Balloud; Sandrine Juillaguet; B. Boyer; V. Souliere; Jean Camassel

Retour

Acte de colloque

Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC

M. Zielinski, C. Balloud, Sandrine Juillaguet, B. Boyer, V. Souliere et Jean Camassel

SILICON CARBIDE AND RELATED MATERIALS 2004, Vol.483, pp.449-452

5th European Conference on Silicon Carbide and Related Materials (Bologna (ITALY), France, 31/08/2004)

2005

Résumé

Al doping

compensation

PHOTOLUMINESCENCE

Recently, a systematic comparison of SIN4S measurements with LTPL (Low Temperature Photoluminescence) spectra led us to propose a straightforward empirical calibration of the LTPL intensity versus Al content in 4H-SiC samples. In the present work we analyze the effect of the LTPL excitation power on the intensity of the Al-related features. We examine the influence of the excitation conditions on the calibration curve and determine the limitations of the method.

Fichiers et liens (1)

url

Find in HALAfficher

Indicateurs

1 Consultations de la notice

Détails

Titre: Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC
Créateurs - sans rôle: M. Zielinski
C. Balloud
Sandrine Juillaguet - Groupe d'étude des semiconducteurs
B. Boyer
V. Souliere
Jean Camassel - Groupe d'étude des semiconducteurs
Détails de publication: SILICON CARBIDE AND RELATED MATERIALS 2004, Vol.483, pp.449-452
Colloque: 5th European Conference on Silicon Carbide and Related Materials (Bologna (ITALY), France, 31/08/2004)
Identifiants: 9943367309311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00541649