Résumé
Noise in short channel SOI MOSFETs is investigated above threshold and in the subthreshold range. Linear and saturated regimes are both analyzed. LOGOS devices and edge-less ones have been studied.
In the ohmic range 1/f noise prevails and follows the Delta N model. In saturation kink effect appears and the excess noise is Lorentzian. Edge-less structures exhibit a larger overshoot noise than the locos ones. Nevertheless in the ohmic range edge-less transistors are less noisy.
In the subthreshold range, at high V-DS polarizations a drastic increase of noise is observed. In this range of biases correlation measurements show that the channel noise is closely correlated to the substrate noise.