Résumé
In current technologies, the robustness of Static Random Access Memories (SRAM) has to be investigated under any possible source of disturbance. In this paper, we evaluate the reliability of an SRAM cell exposed to atmospheric neutron radiation, affected by random threshold voltage variation and under different operation conditions (supply voltage, process corner and temperature). The SRAM cell's Soft Error Rate (SER) at simulation level is estimated using accurate models of atmospheric neutron induced currents. The study shows that in extreme operation conditions and under random process variability, the SER of an SRAM can reach values up to 3X larger than the nominal value, or down to 2X smaller than the nominal value. This large SER range confirms the importance of our study and justifies the need for further evaluation of circuits under radiation at the simulation level.